Study the effect resistivity slide and the time of etching on silicon surfaces morphology of producing photovoltaic method

Abstract

Our work focusing on studying the effect of the etching time and Resistivity on morphology of the Surfaces which is producted by the photochemical  etching method from the wafer silicon n-type  which is used ,where is found by increasing the etching time from 70min to 100 min the high of the nano structural is increasing from 4.17nm to 11.3 nm of same n-type silicon wafer, while  we studying the Resistivity effect on  morphology the results was declare increasing in the product nano structures( i.e the depth etching increase) from 4.11nm to 10 nm under same etching time 70 min of the difference of the wafer  resistance and the etching time, and how that^'s be effecting on the Surface Topographic for the used silicon wafers, Where as much as with increasing the etching time for same wafer the etching depth increasing .                                             

This is up to difference in resistance ,Every time the resistance less that^'s the aching depth longer, The reason of that , the freedom that’s carriers (holes) have it and accessibility to the surface with shape great than  from the wafers have high resistance. So the resistance which responsible of different among aching depth. Either increase in depth for same wafer by increase the aching time, that’s up to the extraction  mechanism which the fluore atoms do it, every time increase the aching time the F atoms floundered at the surface extractioning the si atoms from the surface and freeing H gas and the prodected nano silicon and ruling in its producting conditions considering the first steep of ruling in the devices properties (sensors, Diods, sensors. photocells) and its applications.                                                                     

At the end all of this is important in forware the searching operations  and the developing of renewable