Simulation Effect of Ga2O3 layer thickness on CdTe solar cell by SCAPS-1D

  • Adnan Alwan Mouhammed
  • Ayed N. Saleh

Abstract

The effect of Ga2O3 thickness on CdTe cells was studied using the SCAPS-1D simulator. The best solar cell efficiency (14.65%) was found at the thickness of the gallium oxide layer (1-10nm) and the cell efficiency (η) decrease with an increase in the thickness of the oxide layer and the decrease of the fill factor, thus decreasing the voltage current (I-V) and decreasing the current of the short circuit (Isc). The value of the open circuit voltage (VOC) is approximately constant and at 0.76V. The optical properties of the cell of quantitative efficiency are 86% and decrease within 18nm


 


http://dx.doi.org/10.25130/tjps.24.2019.116

Published
Nov 3, 2019
How to Cite
MOUHAMMED, Adnan Alwan; SALEH, Ayed N.. Simulation Effect of Ga2O3 layer thickness on CdTe solar cell by SCAPS-1D. Tikrit Journal of Pure Science, [S.l.], v. 24, n. 6, p. 110-116, nov. 2019. ISSN 2415-1726. Available at: <http://tjps.tu.edu.iq/index.php/j/article/view/895>. Date accessed: 27 feb. 2021. doi: http://dx.doi.org/10.25130/j.v24i6.895.
Section
Articles